Wafer with diamond layer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorGeorge K. Celler
Life of this patent
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Abstract
A method of manufacturing a wafer using a support substrate of a crystalline material. On the surface of the support substrate, a layer of a diamond is grown to form a first wafer in combination with the support substrate. A further substrate is bonded to the surface of the diamond layer, and a region of weakness is formed within the first wafer or the further substrate. Energy is then applied at the region of weakness to detach the structure into a first portion and a second portion.
Claims19
A method of manufacturing a wafer comprising:
- providing a surface on a support substrate comprising a first crystalline material other than diamond;
- growing a polycrystalline diamond layer on the surface of the support substrate with a first portion in contact with the support substrate and with a second portion having an exposed surface to provide a first wafer with the polycrystalline diamond layer having a thickness sufficient so that the second portion of the polycrystalline diamond layer includes significantly fewer crystalline grains therein than the first portion of the polycrystalline diamond layer;
- providing a further substrate of a second material that is to be bonded to the first wafer;
- forming a region of weakness either in the first wafer or in the further substrate;
- bonding the further substrate to the first wafer at the exposed surface to provide a bonded structure, such that the region of weakness device first and second bonded structure portions of the bonded structure;
- and
- detaching the first bonded structure portion from the second bonded structure portion at the region of weakness to obtain the wafer.
A method of manufacturing a wafer, comprising:
- providing a support substrate comprising a first crystalline material at a surface thereof;
- growing a polycrystalline diamond layer on the surface of the support substrate with a first portion in contact with the support substrate and with a second portion having an exposed surface to provide a first wafer;
- and
- transferring at least a transfer portion of the polycrystalline diamond layer from the first wafer to a further substrate;
- wherein the polycrystalline diamond layer has a thickness that is sufficient to define the first and second diamond layer portions of which the second diamond layer portion includes significantly fewer crystalline grains therein than the first diamond layer portion.
A method of manufacturing a wafer comprising:
- providing a surface on a support substrate comprising a first crystalline material;
- providing on the surface of the support substrate a transfer layer of a transfer polycrystalline material and having a density of crystalline grains;
- growing the transfer layer to provide a first portion in contact with the support substrate and a second portion having an exposed surface to provide a first wafer with the transfer layer having a sufficient thickness such that the second portion of the transfer layer includes significantly fewer crystalline grains therein than the first portion of the transfer layer;
- providing a further substrate that is to be bonded to the first wafer;
- forming a region of weakness either in the first wafer or in the further substrate;
- bonding the further substrate to the first wafer at the exposed surface of the transfer layer to provide a bonded structure, such that the region of weakness defines first and second bonded structure portions of the bonded structure;
- and
- detaching the first bonded structure portion from the second bonded structure portion at the region of weakness to obtain the wafer.
Dependencies are inferred from the claim text.