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US 7,547,558 B2Granted
Method for manufacturing semiconductor device
AssigneeFujitsu Microelectronics Limited
InventorsYoichi Okita, Junichi Watanabe, Naoya Sashida
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AssigneeFujitsu Microelectronics Limited
InventorsYoichi Okita, Junichi Watanabe, Naoya Sashida
Estimating the term…
An Al2O3 film for covering a ferroelectric capacitor is formed by a sputtering process. The thickness of the Al2O3 film is preferably optimized according to amount of remanent polarization and fatigue tolerance required for the ferroelectric capacitor, for example, 10 nm to 100 nm. Next, oxygen is supplied to a PZT film via the Al2O3 film by executing a heat treatment in an oxygen atmosphere. As a result, an oxygen deficit in the PZT film is made up for. At this time, evaporation of Pb in the PZT film is suppressed because of the Al2O3 film, and deterioration of the fatigue tolerance responsive to decrease of Pb amount is suppressed. Subsequently, another Al2O3 film is formed as a second protective film by the sputtering process for opposing the deterioration factor in later process. The thickness of the Al2O3 film is preferably the thickness which sufficiently protects the ferroelectric capacitor from the deterioration factor in later wiring process.
A method for manufacturing a semiconductor device, comprising the steps of:
A method for manufacturing a semiconductor device, comprising the steps of:
Dependencies are inferred from the claim text.
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Having dielectrics comprising perovskite structures: comprising barrier layers to prevent diffusion of hydrogen or oxygen
Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors: characterised by the memory core region
Inorganic electric semiconductor devices
Electronic memory devices
Term ended 26 Mar 2025 (estimated)
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2003-425786, filed on Dec. 22, 2003, the entire contents of which are incorporated herein by reference.
1. Field of the Invention
The present invention relates to a method for manufacturing a semiconductor device suitable for a ferroelectric memory.
FIG. 1A to FIG. 1F are sectional views showing a method for manufacturing a ferroelectric memory having a ferroelectric capacitor according to a first embodiment of the present invention,
FIG. 2A and FIG. 2B are sectional views showing a configuration of a memory cell of the ferroelectric memory;
FIG. 3 is a layout illustrating a relation between electrodes;
Hereinafter, some embodiments of the present invention will specifically described with reference to the accompanying drawings. FIG. 1A to FIG. 1F are sectional views showing a method for manufacturing a ferroelectric memory (a semiconductor device) having a ferroelectric capacitor according to a first embodiment of the present invention. FIG. 2A and FIG. 2B are sectional views showing a configuration of a memory cell of the ferroelectric memory. FIG. 3 is a layout illustrating a relation between electrodes. FIG. 2A and FIG. 2B are sectional views taken along the I-I line, II-II line in FIG. 3 respectively.
In the present embodiment, as a memory cell, a ferroelectric memory in which planar 1T1C (1 transistor-1 capacitor)-type ferroelectric memory cells are arranged in an array is fabricated. In the following description, a direction in which a word line extends is called a row direction, and a direction orthogonal to a word line is called a column direction.
First, a field effect transistor 41 (refer to FIG. 2B) is formed on the surface of a semiconductor substrate 40 (refer to FIG. 2A and FIG. 2B) as a switching element of each memory cell. Next, an interlayer insulating film (a base film) 1 for covering each transistor 41 is formed.