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US 7,466,004 B2Granted
Diode structure to suppress parasitic current
AssigneePolar Semiconductor, Inc.
InventorsSteven L. Kosier, David M. Elwood
Life of this patent
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Abstract
A diode conducts current between an anode terminal and a cathode terminal. The diode includes a parasitic transistor formed between one of the terminals and the substrate. The diode also includes a second transistor that competes with the parasitic transistor to direct current flow between the anode terminal and the cathode terminal.
Claims19
A diode comprising:
- a substrate of a first conductivity type;
- an epitaxial region of a second conductivity type adjacent the substrate;
- a first terminal;
- a second terminal spaced from the first terminal;
- a first region of the first conductivity type connected to the first terminal and the epitaxial region;
- a second region of the first conductivity type connected to the second terminal and the epitaxial region;
- and
- a third region of the second conductivity type connected to the second terminal and the epitaxial region.
5 more elements
A diode for conducting current between a first terminal and a second terminal, the diode comprising:
- a substrate;
- an epitaxial region of a first conductivity type adjacent the substrate;
- a first doped region of a second conductivity type connected to the first terminal and the epitaxial region;
- and
- means for passing, current from the epitaxial region to the second terminal to divert current from an undesired location.
2 more elements
A diode comprising:
- a substrate of a first conductivity type;
- an epitaxial region of a second conductivity type adjacent the substrate;
- a first terminal adjacent the epitaxial region;
- a second terminal adjacent the epitaxial region and spaced from the first terminal;
- a first transistor comprising:
- a first region of the first conductivity type;
- the epitaxial region connected to the first region;
- and
- the substrate connected to the epitaxial region;
- a second transistor comprising:
- the first region;
- the epitaxial region connected to the first region;
- and
- a second region of the first conductivity type, connected to the epitaxial region and the second terminal and spaced from the first region;
- and
- a third region of the second conductivity type, connected to the epitaxial region and the second terminal.
13 more elements
Dependencies are inferred from the claim text.