Back to results
US 7,465,976 B2Granted
Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
AssigneeIntel Corporation
InventorsJack T. Kavalieros, Matthew V. Metz, Gilbert Dewey, Ben Jin, Justin K. Brask, Suman Datta, Robert S. Chau
Life of this patent
Estimating the term…
Abstract
The present invention relates to a Tunnel Field Effect Transistor (TFET). which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The IFET further includes a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.
Claims11
A tunneling field effect transistor formed on a semiconductor substrate comprising:
- a gate dielectric on said semiconductor substrate;
- a gate electrode above said gate dielectric;
- a pair of spacers adjacent to said gate dielectric and said gate electrode
- a source region and a drain region on opposing sides of said gate electrode, said source region formed of a different material than said drain region;
- wherein said source region has a first conductivity and said drain region has a second conductivity and wherein said first conductivity is opposite said second conductivity.
2 more elements
A tunneling field effect transistor formed on a silicon substrate comprising:
- a high-k gate dielectric on said silicon film;
- a gate electrode above said high-k gate dielectric;
- a pair of spacers adjacent to said high-k gate dielectric and said gate electrode;
- a source region on one side of said gate electrode and a drain region on the opposing side of said gate electrode than said source region, wherein said source region is formed of a different material than said drain region;
- wherein said drain region has a first conductivity and said source region has a second conductivity;
- wherein said first conductivity is opposite said second conductivity.
3 more elements
A tunneling field effect transistor formed on a semiconductor substrate comprising:
- a channel region in the semiconductor substrate;
- a gate electrode above the gate dielectric;
- a pair of spacers adjacent to the gate dielectric and the gate electrode;
- a source region and a drain region on opposing sides of the gate electrode, wherein the source region is formed of a material sufficient to create energy band bending, and the source region is formed of a different material than the drain region;
- wherein the source region has a first conductively and the drain region has a second conductivity, and wherein the first conductivity is opposite the second conductivity.
2 more elements
Dependencies are inferred from the claim text.