US 7,465,631 B2 · Method of fabricating a non-volatile memory device

Abstract

A non-volatile memory device and a method of manufacturing the same, in which the program speed can be enhanced and the interference phenomenon can be reduced. The non-volatile memory device includes a semiconductor substrate having an active region defined by isolation layers arranged in one direction, a control gate arranged vertically to the direction in which the isolation layers are arranged, a floating gate formed on the active region below the control gate and having a lateral curve so that the floating gate has a width narrowed upwardly, a gate insulating layer formed between the floating gate and the semiconductor substrate, and a dielectric layer formed between the floating gate and the control gate.

Claims6

Dependent claims

A method of fabricating a non-volatile memory device, the method comprising the steps of:

forming a gate insulating layer, a floating gate layer, and a hard mask layer over a semiconductor substrate;
forming a trench to etch floating gate layer, gate insulating layer and the semiconductor substrate;
recessing the hard mask layer so that both edges of the floating gate layer are exposed;
etching the floating gate layer using the recessed hard mask layer;
depositing an isolation material to fill the trench;
removing the hard mask layer;
and
forming a dielectric layer, and a control gate layer.

5 more elements

Dependencies are inferred from the claim text.

Method of fabricating a non-volatile memory device

Life of this patent

Method of fabricating a non-volatile memory device

Life of this patent

Abstract

Claims6