Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device, comprising the steps of:

• forming an element layer including, a plurality of integrated circuits over one surface of a substrate;
• forming a protective layer including a resin so as to cover at least a side surface of the substrate and a side surface of the element layer;
• grinding the other surface of the substrate;
• polishing the ground other surface of the substrate;
• washing the polished other surface of the substrate;
• drying the washed other surface of the substrate;
• removing the protective layer;
• and
• dividing the dried substrate and the element layer so as to form stack bodies including a layer provided with at least one of the plurality of integrated circuits.

A manufacturing method of a semiconductor device, comprising the steps of:

• forming an element layer including a plurality of integrated circuits over one surface of a substrate;
• forming a protective layer including a resin so as to cover the other surface of the and substrate a side surface of the substrate and a side surface of the element layer;
• grinding the other surface of the substrate;
• polishing the ground other surface of the substrate;
• removing the protective layer;
• and
• dividing the polished substrate and the element layer so as to form stack bodies including a layer provided with at least one of the plurality of integrated circuits.

A manufacturing method of a semiconductor device, comprising the steps of:

• forming an element layer including a plurality of integrated circuits over onesurface of a substrate;
• dividing the substrate and the element layer so as to form stack bodies including a layer provided with at least one of the plurality of integrated circuits;
• forming a protective layer including a resin so as to cover at least a side surface of the stack bodies;
• grinding the other surface of the substrate in the stack bodies;
• polishing the ground other surface of the substrate;
• and
• removing the protective layer.

A manufacturing method of a semiconductor device, comprising the steps of:

• forming an element layer including a plurality of integrated circuits over one surface of a substrate;
• dividing the substrate and the element layer so as to form stack bodies including a layer provided with at least one of the plurality of integrated circuits;
• forming a protective layer including a resin so as to cover the other surface of the substrate in the stack bodies and side surfaces of the stack bodies;
• grinding the other surface of the substrate in the stack bodies;
• polishing the ground other surface of the substrate;
• and
• removing the protective layer.

A manufacturing method of a semiconductor device, comprising the steps of:

• forming an element layer including a plurality of integrated circuits over onesurface of a substrate;
• forming a protective layer including a resin so as to cover at least a side surface of the substrate and a side surface of the element layer;
• thinning the substrate;
• removing the protective layer;
• and
• dividing the substrate and the element layer to form stack bodies including a layer provided with at least one of the plurality of integrated circuits.