Polymer for forming anti-reflective coating layer
AssigneeDongjin Semichem Co., Ltd.
InventorsSang-Jung Kim, Deog-Bae Kim, Jae-Hyun Kim
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Abstract
A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R1 is a substituted or non-substituted alky group of C1 to C5.
Claims9
A polymer for forming an organic anti-reflective coating layer comprising repeating units represented by the following Formula 1 and 2,
- wherein, R1 is a substituted or non-substituted alky group of C1 to C5.
A composition for forming an organic anti-reflective coating layer comprising:
- a polymer including repeating units represented by Formula 1 and Formula 2;
- a light absorber;
- and a solvent,
- wherein, R1 is a substituted or non-substituted alky group of C1 to C5.
A method for forming a semi-conductor element pattern, comprising the steps of:
- applying the composition of a polymer comprising repeating units represented by the following Formula 1 and 2, a light absorber;
- and a solvent for forming an organic anti-reflective coating layer on an etching layer;
- wherein, R1 is a substituted or non-substituted alky group of C1 to C5;
- forming the organic anti-reflective coating layer by curing the composition applied on the etching layer;
- forming a photoresist pattern by applying a photoresist composition on the organic anti-reflective coating layer to form a photoresist layer, exposing the photoresist layer to an exposure light of a predetermined pattern, and developing the exposed photoresist layer;
- and
- forming an etching pattern by etching the organic anti-reflective coating layer and the etching layer with the formed photoresist pattern as a mask.
Dependencies are inferred from the claim text.