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US 7,461,472 B2Granted
Half-tone phase shift mask and patterning method using thereof
AssigneePowerchip Semiconductor Corp.
InventorJun-Cheng Lai
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Abstract
A half-tone phase shift mask including at least a mask substrate, a half-tone phase shift layer and a sheltering layer. The half-tone phase shift layer is a strip-like profile that forms on the surface of the mask substrate. The sheltering layer is formed on the two ends of the half-tone phase shift layer so that a portion of the half-tone phase shift layer is exposed. The sheltering layer has a width greater than the half-tone phase shift layer.
Claims9
A method of using a half-tone phase shift mask to form a strip pattern having two thicker ends and a narrower mid section, comprising the steps of:
- providing a substrate;
- forming a material layer over the substrate;
- forming a photoresist layer on flee material layer;
- patterning the photoresist layer using the half-tone phase shift mask, wherein the half-tone phase shift mask comprises:
- a mask substrate;
- two sheltering layers formed as first strips on the mask substrate with a space therebetween;
- a half-tone phase shift layer formed as a second strip and disposed at least in the space between the first strips, wherein the second strip is thinner than the first strips;
- and
- patterning the material layer using the patterned photoresist layer as an etching mask to form the strip.
6 more elements
Dependencies are inferred from the claim text.