Electrical open/short contact alignment structure for active region vs. gate region

A method of measuring a structural characteristic of a plurality of polysilicon shapes to a silicon area comprising the steps of:

• forming each particular polysilicon shape of the plurality of polysilicon shapes to have a bridging vertex, each bridging vertex having a unique orientation relative to the silicon area;
• and
• determining for each particular polysilicon shape of a plurality of polysilicon shapes if an electrical bridge exists between the silicon area and each particular polysilicon shape;
• and wherein a bridging vertex is a portion of a particular polysilicon shape on a semiconductor chip, the portion having an angle, as seen from a top view, acute enough to prevent a sidewall spacer being formed on a vertical surface of the particular polysilicon shape at the bridging vertex during a step of processing the semiconductor chip having the plurality of polysilicon shapes, including the particular polysilicon shape, and the silicon area, thereby allowing silicide to form on the vertical surface of the particular polysilicon shape at the bridging vertex in a silicide step performed during processing of the semiconductor chip.