Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Jun Kim, Jeong-Heon Park, Chang-Ki Hong, Jae-Dong Lee
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Abstract
A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming metal wiring using the slurry. The slurry may include a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. The CMP method and method of forming metal wiring may employ one or two slurries with at least one of the slurries including at least one defect inhibitor.
Claims19
A slurry for a chemical mechanical polishing (CMP) method for a metal film, comprising:
- a polishing agent including at least one material selected from the group consisting of colloidal silica and fumed silica, and the content of the polishing agent is in a range of 0.5-20 weight % (inclusive) of a total weight of the slurry;
- an oxidant;
- and
- at least one defect inhibitor to protect the metal film, wherein the at least one defect inhibitor includes an ionic group with a charge opposite to a charge on a surface of the metal film.
A slurry for a chemical mechanical polishing (CMP) method for a metal film, comprising:
- a polishing agent;
- an oxidant including at least one material selected from the group consisting of hydrogen peroxide and ammonium persulfate, and the content of the oxidant is in a range of 0.5-5 weight % (inclusive) of a total weight of the slurry;
- and
- at least one defect inhibitor to protect the metal film, wherein the at least one defect inhibitor includes an ionic group with a charge opposite to a charge on a surface of the metal film.
A slurry for a chemical mechanical polishing (CMP) method for a metal film, comprising:
- a polishing agent;
- an oxidant;
- at least one defect inhibitor to protect the metal film, wherein the first of the at least one defect inhibitors includes at least one material selected from the group consisting of PAA, PAMA, salts thereof, and mixtures thereof, wherein the at least one defect inhibitor includes an ionic group with a charge opposite to a charge on a surface of the metal film;
- and
- a pH controller for controlling a pH of the slurry.
A slurry for a chemical mechanical polishing (CMP) method for a metal film, comprising:
- a polishing agent;
- an oxidant;
- and
- at least one defect inhibitor to protect the metal film, wherein the first of the at least one defect inhibitors includes at least one material selected from the group consisting of PAA, PAMA, salts thereof, and mixtures thereof, and further lowers a pH of the slurry, and
- wherein the at least one defect inhibitor includes an ionic group with a charge opposite to a charge on a surface of the metal film.
Dependencies are inferred from the claim text.