SiC material, semiconductor device fabricating system and SiC material forming method

A processing system comprising:

• a processing vessel including a first tube part and a second tube part, for containing a substrate therein, and processing the substrate,
• a heating part provided outside the first tube, for heating the substrate,
• a support part for supporting the processing vessel,
• a substrate holding part provided within the processing vessel, for holding the substrate,
• a gas supply part for supplying a process gas into the processing vessel, and
• an exhaust part for exhausting the processing vessel to reduce the pressure of the processing vessel, wherein
• each of at least some of the parts in the processing vessel includes a base body, and a CVD-SiC material formed on the base body by CVD,
• the CVD-SiC material contains β-SiC crystals, and α-SiC crystals of 6H structure, and the processing system is a LPCVD system, and
• the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the CVD-SiC material is 0.15-0.561.

A processing system comprising:

• a processing chamber part for containing a substrate therein, and processing the substrate,
• a heating part for heating the substrate,
• a substrate holding part for holding the substrate, and
• a gas supply part for supplying a process gas into the processing chamber part, wherein
• each of at least some of the parts in the processing vessel includes a base body, and a CVD-SiC material formed on the base body by CVD,
• the CVD-SiC material contains β-SiC crystals, and α-SiC crystals of 6H structure, and the processing system is a rapid thermal processing system, and
• the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the CVD-SiC material is 0.15-0.561.

A processing system comprising:

• a processing chamber part for containing a substrate therein, and processing the substrate,
• a heating part for heating the substrate,
• a substrate holding part for holding the substrate,
• a gas supply part for supplying a film forming gas into the processing chamber part, and
• an exhaust part for exhausting the processing chamber part to reduce the pressure of the processing chamber part, wherein
• each of at least some of the parts in the processing vessel includes a base body, and a CVD-SiC material formed on the base body by CVD,
• the CVD-SiC material contains β-SiC crystals, and α-SiC crystals of 6H structure, and the processing system is an epitaxial CVD system, and
• the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the CVD-SiC material is 0.15-0.561.

A processing system comprising:

• a processing chamber part for containing a substrate therein, and processing the substrate,
• a lower electrode part provided in the processing chamber part for supporting the substrate,
• an upper electrode part provided above the lower electrode part, the upper electrode part having a plurality of holes,
• a gas supply part for supplying a process gas through the holes, and
• a high-frequency power source part connected to the lower and upper electrode parts, for applying a high-frequency power to generate plasma in the processing chamber part, wherein
• each of at least some of the parts in the processing vessel includes a base body, and a CVD-SiC material formed on the base body by CVD,
• the CVD-SiC material contains β-SiC crystals, and α-SiC crystals of 6H structure, and the processing system is an plasma etching system, and
• the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the CVD-SiC material is 0.15-0.561.

A processing system comprising:

• a processing chamber part for containing, a substrate therein, and processing the substrate,
• a heating part for heating the substrate,
• a substrate holding part for holding the substrate,
• a gas supply part for supplying a film forming gas into the processing chamber part, and
• an exhaust part for exhausting the processing chamber part to reduce the pressure of the processing chamber part, wherein
• each of at least some of the parts in the processing vessel includes a base body, and a CVD-SiC material formed on the base body by CVD,
• the CVD-SiC material contains β-SiC crystals, and α-SiC crystals of 6H structure, and the processing system is a coating system for resist film forming and developing, and
• the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes of the CVD-SiC material is 0.15-0.561.