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US 7,410,909 B2Granted
Method of removing ion implanted photoresist
AssigneeHynix Semiconductor Inc.
InventorsJi Hye Han, Ok Min Moon, Woo Jin Kim, Hyo Seob Yoon, Ji Yong Park, Kee Joon Oh
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Abstract
A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.
Claims8
A method of removing an ion implanted photoresist, comprising the steps, in order, of:
- first cleaning a semiconductor substrate having an ion implanted photoresist using deionized water to which a megasonic process is applied;
- first rinsing the semiconductor substrate using deionized water;
- drying the semiconductor substrate;
- removing the ion implanted photoresist;
- and
- cleaning the semiconductor substrate, using a sulfuric acid peroxide mixture (SPM) solution.
3 more elements
Dependencies are inferred from the claim text.