Substrate processing method
AssigneeTokyo Electron Limited
InventorsTakayuki Toshima, Naoki Shindo, Tadashi Iino
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Abstract
Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processing vessel to pressurize an atmosphere surrounding a substrate. A solvent gas, such as steam, is fed into the processing vessel while the processing gas is fed into the processing vessel, whereby a resist of the substrate can be removed with the solvent gas and the processing gas while metal corrosion, etc. can be prevented.
Claims6
A substrate processing method for processing at least a substrate-to-be-processed held in a processing vessel with a processing gas fed to the substrate, the method comprising:
- a first step of feeding the processing gas into the processing vessel to pre-pressurize an atmosphere surrounding the substrate;
- and
- a second step of feeding a solvent vapor and the processing gas into the processing vessel pre-pressurized by the processing gas to process the substrate after the first step, wherein the processing gas is ozone gas and the solvent vapor is steam.
Dependencies are inferred from the claim text.