Structure and method for accurate deep trench resistance measurement
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Geng Wang
Life of this patent
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Abstract
A test structure for implementing resistance measurement of a deep trench formed in a semiconductor device includes a deep trench formed within a semiconductor substrate. The deep trench has a dielectric material formed on upper portions of sidewall surfaces thereof, and includes a conductive fill material therein. A doped buried plate region encompasses a bottom portion of the deep trench, and a doped horizontal n-well band is in electrical contact with an upper portion of the doped buried plate region. A doped vertical n-well band is in electrical contact with the doped horizontal n-well band.
Claims6
A semiconductor device, comprising:
- a test structure including a deep trench formed within a semiconductor substrate;
- said deep trench having a dielectric material formed on upper portions of sidewall surfaces thereof, and said deep trench including a conductive fill material therein;
- a doped buried plate region encompassing a bottom portion of said deep trench;
- a doped horizontal n-well band in electrical contact with an upper portion of said doped buried plate region;
- and
- a doped vertical n-well band in electrical contact with said doped horizontal n-well band, thereby facilitating a resistance measurement of said deep trench structure of said test structure.
A semiconductor device, comprising:
- a test structure including a deep trench structure formed within a semiconductor substrate, said deep trench being formed at a depth of at least about 7 microns;
- a first electrical contact formed on a surface of said semiconductor substrate;
- a second electrical contact formed on a surface of said semiconductor substrate;
- a dielectric material formed on upper portions of sidewall surfaces of said deep trench structure, and said deep trench structure including a polysilicon fill material therein;
- a doped buried plate region encompassing a bottom portion of said deep trench structure;
- a doped horizontal n-well band in electrical contact with an upper portion of said doped buried plate region;
- and
- a doped vertical n-well band in electrical contact with said doped horizontal n-well band;
- wherein an electrically conductive path is defined between said first electrical contact, said deep trench structure, and said second electrical contact, thereby facilitating a resistance measurement of said deep trench structure of said test structure.
Dependencies are inferred from the claim text.