Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same

A method of manufacturing a capacitor of a semiconductor device, comprising:

• forming a first interlayer insulator on a semiconductor substrate and planarizing the first interlayer insulator;
• forming a lower electrode on the first interlayer insulator;
• forming a lower dielectric film having a negative quadratic VCC on the lower electrode in situ using a plasma enhanced atomic layer deposition (PEALD) process;
• forming an intermediate dielectric film having a positive quadratic VCC directly on the lower dielectric film in situ using a PEALD process;
• forming an upper dielectric film having a negative quadratic VCC directly on the intermediate dielectric film in situ using a PEALD process, wherein the PEALD process used to form the lower dielectric film and the upper dielectric film in situ uses a source comprising hexachlorodisiloxane (HCDSO);
• forming an upper electrode on the upper dielectric film;
• patterning the upper electrode to expose a portion of the upper dielectric film;
• patterning a portion of the exposed upper dielectric film, intermediate dielectric film, and lower dielectric film to expose a portion of the lower electrode;
• forming a second interlayer insulator on exposed portions of the upper electrode, upper dielectric film, and lower electrode;
• and
• performing a post-treatment after forming of the upper dielectric film.