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US 7,407,868 B2Granted
Chemical thinning of silicon body of an SOI substrate
AssigneeIntel Corporation
InventorsJustin K. Brask, Mohamed A. Shaheen, Ruitao Zhang
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Abstract
The present invention discloses a method including: providing a silicon wafer; forming a buried oxide (BOX) in the silicon wafer below a silicon body; and reducing a thickness of the silicon body by chemical thinning.
Claims12
A method comprising:
- providing a silicon wafer;
- forming a buried oxide (BOX) in said silicon wafer below a silicon body;
- and
- reducing a thickness of said silicon body by chemical thinning in an alkaline solution with an additive, said alkaline solution comprising tetramethyl ammonium hydroxide (TMAH), said additive comprising trimethylamine.
1 more element
A method comprising:
- providing a seed wafer;
- forming an oxide over said seed wafer;
- forming a release interface in said seed wafer below said oxide;
- bonding said oxide to a handle wafer to form a buried oxide (BOX), said BOX being embedded between said seed wafer and said handle wafer;
- removing a portion of said seed wafer that is disposed below said release interface, leaving behind a silicon body attached to said buried oxide;
- and
- chemically thinning said silicon body in an alkaline solution with an additive, said alkaline solution comprising tetramethyl ammonium hydroxide (TMAH), said additive comprising trimethylamine.
4 more elements
Dependencies are inferred from the claim text.