US 7,407,847 B2 · Stacked multi-gate transistor design and method of fabrication

Abstract

A multi-body thickness (MBT) field effect transistor (FET) comprises a silicon body formed on a substrate. The silicon body may comprise a wide section and a narrow section between the wide section and the substrate. The silicon body may comprise more than one pair of a wide section and a narrow section, each pair being located at a different height of the silicon body. The silicon body is surrounded by a gate material on three sides. The substrate may be a bulk silicon substrate or a silicon-on-insulator (SOI) substrate. The MBT-FET combines the advantages of a wide fin device and a narrow fin device.

Claims19

Dependent claims

A method comprising:

forming a transistor having a silicon body on a substrate;
forming a blanket of an oxide layer covering the silicon body;
removing a top layer of the oxide layer to expose a segment of the silicon body;
and
forming a narrow section at a bottom portion of the exposed segment, wherein the narrow section is located between a wide section and the substrate.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

11/395,860Filed 31 Mar 2006

Published

US 2007/0231997 A14 Oct 2007

Granted

5 Aug 2008

Term ends

Not estimatedThe source records don’t support an estimate.

Classification3 codes

H10D 30/6212
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies having non-rectangular cross-sections
H10D 30/0245
Of fin field-effect transistors [FinFET]: by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
H10D
Inorganic electric semiconductor devices

Stacked multi-gate transistor design and method of fabrication

Life of this patent

Stacked multi-gate transistor design and method of fabrication

Life of this patent

Abstract

Claims19