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US 7,407,739 B2Granted
Resist developer and resist pattern formation method using same
AssigneeTokyo Ohka Kogyo Co., Ltd.
InventorKazuyuki Nitta
Life of this patent
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Abstract
A resist developer capable of forming a high resolution resist pattern with good shape and little film thinning is provided, together with a resist pattern formation method using such a developer. The resist developer is an aqueous solution comprising an ammonium hydroxide represented by a general formula (I): R1nR24-nN+.OH− wherein R1 is a lower alkyl group in which the number of carbon atoms is A, R2 is a lower alkyl group in which the number of carbon atoms is B, A<B, and n is an integer from 1 to 3.
Claims9
A resist pattern formation method, comprising:
- forming a resist layer from a chemically amplified positive resist;
- exposing said resist layer disposed on a substrate;
- and
- developing said resist layer using an aqueous alkyl ammonium hydroxide solution having a concentration of ammonium hydroxide of 2.35 to 2.5 wt %, said alkyl ammonium hydroxide represented by a general formula (I) shown below:
- R1nR24-nN+.OH− (I)
- wherein R1 is a lower alkyl group in which a number of carbon atoms is A, R2 is a lower alkyl group in which a number of carbon atoms is B, A<B, and n is an integer from 1 to 3;
- and
- wherein said chemically amplified positive resist comprises a resin with chain type alkoxyalkyl groups as acid dissociable, dissolution inhibiting groups as a base resin, and an acid generator.
5 more elements
Dependencies are inferred from the claim text.