Method for stripping photoresist from etched wafer
AssigneeLam Research Corporation
InventorsEric A. Hudson, Peter Cirigliano
Life of this patent
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Abstract
A method of forming a feature in a low-k (k<3.0) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A stripping gas comprising CO2 is provided. A plasma is formed from the stripping gas comprising CO2. The plasma from the stripping gas comprising CO2 is used to strip the patterned photoresist mask.
Claims16
A method of forming a feature in a low-k dielectric layer of a porous organosilicate glass, comprising:
- placing a low-k dielectric layer of a porous organosilicate glass over a substrate;
- placing a patterned photoresist mask over the low-k dielectric layer;
- etching at least one feature into the low-k dielectric layer;
- providing a stripping gas comprising CO2, wherein the stripping gas has a total flow rate and a flow rate of CO2 is at least 25% of the total flow rate;
- forming a plasma from the stripping gas comprising CO2;
- and
- using products from the plasma from the stripping gas comprising CO2 to strip the patterned photoresist mask.
A method of forming a feature in an organosilicate glass layer, comprising:
- placing an organo silicate glass layer over a substrate, wherein the placing the organo silicate glass layer over the substrate further comprises making the organosilicate glass layer porous;
- placing a patterned photoresist mask over the organo silicate glass layer;
- etching at least one feature into the organo silicate glass layer;
- providing a stripping gas comprising CO2;
- forming a plasma from the stripping gas comprising CO2;
- and
- using the plasma from the stripping gas comprising CO2 to strip the patterned photoresist mask.
Dependencies are inferred from the claim text.