Composite structure with high heat dissipation
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBruce Faure, Alice Boussagol
Life of this patent
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Abstract
A composite structure is disclosed that includes a support wafer and a layered structure on the support wafer. The layered structure includes at least one layer of a monocrystalline material and at least one layer of a dielectric material. In addition, the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure. The composite structure provides sufficient heat dissipation properties for manufacturing optical, electronic, or optoelectronic components.
Claims16
A composite structure, comprising:
- a support wafer;
- and
- a layered structure on the support wafer, the layered structure including at least one layer of a monocrystalline material and at least one layer of a dielectric material,
- wherein the layered structure materials and the thickness of each layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is a value that is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer having the same dimensions as the composite structure, to provide sufficient heat dissipation properties to allow use of the composite structure for manufacturing optical, electronic, or optoelectronic components.
A hybrid structure suitable for use as a substrate for the crystalline growth of a nitride semiconductor, comprising:
- a support wafer;
- a layered structure on the support wafer to form a composite structure, the layered structure including at least one monocrystalline material layer and at least one dielectric material layer, and wherein the layered structure materials and the thickness of each material layer are chosen such that the thermal impedance between ambient temperature and 600° K of the composite structure is no greater than about 1.3 times the thermal impedance of a monocrystalline bulk SiC wafer with the same dimensions as the composite structure;
- and
- a monocrystalline upper structure formed on a free surface of the monocrystalline material layer, wherein the material of the upper structure is suitable for forming a high quality nitride semiconductor layer thereon.
Dependencies are inferred from the claim text.