Method for manufacturing a compound material wafer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsThibaut Maurice, Phuong Nguyen, Eric Guiot
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Abstract
The invention relates to a method for manufacturing a compound material wafer. The technique includes forming a weakened zone in a source substrate, attaching the source substrate to a handle substrate to form a source-handle assembly, and thermally annealing the source-handle assembly to further weaken the weakened zone. The method also includes holding the assembly at a holding temperature, and detaching the source substrate from the assembly at the weakened zone at the holding temperature. The holding temperature is greater than room temperature but does not promote further weakening of the weakened zone.
Claims17
A method for manufacturing a compound material wafer, comprising:
- forming a weakened zone in a source substrate;
- attaching the source substrate to a handle substrate to form a source-handle assembly;
- thermally annealing the source-handle assembly to further weaken the weakened zone;
- and
- mechanically detaching the source substrate from the assembly at the weakened zone while maintaining the assembly at a holding temperature that is greater than room temperature but that does not promote further weakening of the weakened zone.
Dependencies are inferred from the claim text.