Evaluation method using a TEG, a method of manufacturing a semiconductor device having a TEG, an element substrate and a panel having the TEG, a program for controlling dosage and a computer-readable recording medium recoding the program

An evaluation method of a TFT comprising:

• a step of forming a TEG and the TFT over a same substrate, each having a gate electrode that is laminated with a first conductive film and a second conductive film over a semiconductor film which has a low concentration impurity region overlapping the gate electrode,
• a step of measuring resistance of the low concentration impurity region of the TEG, and estimating an impurity concentration of the low concentration impurity region of the TFT by the resistance,
• wherein an edge of the first conductive film extends beyond an edge of the second conductive film, and
• wherein a side edge portion of the semiconductor film is provided between the edge of the first conductive film and the edge of the second conductive film.

An evaluation method of a TFT comprising:

• a step of forming a TEG and the TFT over a same substrate, each having a gate electrode with a taper which is formed to have a first conductive film over a semiconductor film and a second conductive film over the first conductive film, the semiconductor film having a low concentration impurity region overlapping the taper of the gate electrode,
• a step of measuring resistance of the low concentration impurity region of the TEG, and
• estimating an impurity concentration of the low concentration impurity region of the TFT in accordance with the taper by the resistance,
• wherein the gate electrode with the taper is formed by taper etching, which is performed simultaneously on the gate electrode of the TEG and the gate electrode of the TFT,
• wherein an edge of the first conductive film extends beyond an edge of the second conductive film, and
• wherein a side edge portion of the semiconductor film is provided between the edge of the first conductive film and the edge of the second conductive film.

An evaluation method of a TFT comprising:

• a step of forming a TEG and the TFT over a same substrate, each having a gate electrode that is laminated with a first conductive film and a second conductive film each having a taper over a semiconductor film which has a low concentration impurity region overlapping the taper of the gate electrode,
• a step of measuring resistance of the low concentration impurity region of the TEG, and
• estimating an impurity concentration of the low concentration impurity region of the TFT in accordance with the taper by the resistance,
• wherein an edge of the first conductive film extends beyond an edge of the second conductive film, and
• wherein a side edge portion of the semiconductor film is provided between the edge of the first conductive film and the edge of the second conductive film.

An evaluation method of a TFT comprising:

• a step of forming a first TEG, a second TEG, a third TEG and the TFT over a same substrate, each having a gate electrode that is laminated with a first conductive film and a second conductive film over a semiconductor film which has a low concentration impurity region overlapping the gate electrode;
• a step of measuring resistance of the low concentration impurity of the first TEG;
• a step of measuring resistance of a channel forming region of the second TEG;
• a step of measuring resistance of an impurity region of the third TEG;
• and
• estimating impurity concentrations of the low concentration impurity region, a channel forming region and an impurity region in the TFT by the resistance,
• wherein a side edge portion of the semiconductor film in the first TEG is provided between an edge of the first conductive film and an edge of the second conductive film,
• wherein an edge of the second conductive film in the second TEG is extended beyond side edge portion of the semiconductor film, and
• wherein an edge of the first conductive film in the third TEG is not extended beyond a side edge portion of the semiconductor film.