Method and apparatus for forming a barrier metal layer in semiconductor devices
AssigneeDongbu Electronics Co., Ltd.
InventorSangtae Ko
Life of this patent
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Abstract
A method and apparatus for forming a barrier metal layer in semiconductor devices are disclosed. A disclosed method for forming a barrier metal layer in a semiconductor device forms an interlayer insulating layer on a front face of a semiconductor substrate having a contact area and patterns the interlayer insulating layer to open the contact area. The disclosed method further places the semiconductor substrate in a chamber, injects reactant gas and precursor into the chamber, transforms the gas into plasma gas and causes the plasma gas to react with the precursor to form a single TiSiN film covering the contact area.
Claims7
A method for forming a barrier metal layer in a semiconductor device, comprising:
- forming an interlayer insulating layer on a front face of a semiconductor substrate having a contact area;
- patterning the interlayer insulating layer to open the contact area;
- placing the substrate in a chamber having a process space divided into a first section and a second section by a partition, wherein the partition includes a plurality of through holes;
- injecting reactant gas into the first section and precursor into the second section;
- transforming the reactant gas into plasma gas;
- and
- causing the plasma gas to react with the precursor to form a single TiSiN film covering the contact area wherein the holes allow selective passage of reactant gas that is transformed into plasma toward the second section in order to minimize plasma damage and unnecessary impurities to the semiconductor substrate.
Dependencies are inferred from the claim text.