US 7,119,443 B2Granted

Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element

AssigneeHitachi, Ltd.

InventorsYoshitaka Nakamura, Tsuyoshi Tamaru, Naoki Fukuda, Hidekazu Goto, Isamu Asano, Hideo Aoki, Keizo Kawakita, Satoru Yamada, Katsuhiko Tanaka, Hiroshi Sakuma, Masayoshi Hirasawa

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Abstract

The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

Claims5

Dependent claims

A semiconductor integrated circuit device comprising:

a substrate;
a titanium nitride film formed over the substrate and containing a halogen element;
a first conductive film formed over the substrate;
and a second conductive film formed between the titanium nitride film and the first conductive film, the second conductive film containing metal atoms bondable to the halogen element, and having a greater capacity to trap the halogen element than tungsten,
wherein the second conductive film is a film deposited by a CVD method using a material gas with a halogen free element after polishing the titanium nitride film by a CMP method, or deposited by sputtering in a halogen free ambient after polishing the titanium nitride film by a CMP method.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/959,634Filed 7 Oct 2004 · continuation
Priority: JP 9-17415030 Jun 1997
Published: US 2005/0040452 A124 Feb 2005
Granted: 10 Oct 2006
Term ends: Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10B 12/033
Making the capacitor or connections thereto: the capacitor extending over the transistor
H10W 20/42
Characterised by their conductive parts: vias, e.g. via plugs
H10B
Electronic memory devices
H10W
Generic packages, interconnections, connectors or other constructional details of devices covered by

Family

Application09/106,074Parent of this continuation · filed 29 Jun 1998
Application09/480,480Parent of this division · filed 11 Jan 2000
Application10/287,616Parent of this continuation · filed 5 Nov 2002
Application10/453,611Parent of this continuation · filed 4 Jun 2003
US 2005/0040452 A1Pre-grant publication · published 24 Feb 2005
US 6,853,081 B2Parent of this continuation
US 6,605,530 B2Parent of this continuation
US 6,492,730 B1Parent of this division
Application10/287,616Parent of this division
US 6,028,360 AParent of this continuation
Application09/480,480Parent of this continuation
US 2003/0064578 A1Published application
US 2003/0205811 A1Published application
US 7,119,443 B2This patent

From the US filing history. Foreign family members aren’t listed.