Methods of forming patterned photoresist layers over semiconductor substrates

A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:

• forming a porous antireflective coating over a semiconductor substrate;
• providing a photoresist base-widening fluid within pores of the porous antireflective coating;
• forming a positive photoresist over the porous antireflective coating having the fluid therein;
• and
• patterning and developing the positive photoresist to form a patterned photoresist layer, the fluid within the pores being effective to widen a base of the patterned positive photoresist adjacent the antireflective coating than would otherwise occur in the absence of the fluid within the pores.

A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:

• forming a porous antireflective coating over a semiconductor substrate;
• providing a liquid-comprising material within pores of the porous antireflective coating;
• forming photoresist over the porous antireflective coating having the liquid-comprising material therein;
• and
• patterning and developing the photoresist over the porous antireflective coating having the liquid-comprising material therein to form a patterned photoresist layer.

A method of forming a patterned photoresist layer over a semiconductor substrate, comprising:

• forming a porous antireflective coating over a semiconductor substrate;
• providing a fluid within pores of the porous antireflective coating;
• the fluid comprising at least one of a photoacid generator, a photobase generator, a pH buffer, and hexamethyldisalizane;
• forming photoresist over the porous antireflective coating having the fluid therein;
• and
• patterning and developing the photoresist over the porous antireflective coating having the fluid therein to form a patterned photoresist layer.