Methods of eliminating pattern collapse on photoresist patterns
AssigneeMicron Technology, Inc.
InventorsJon Daley, Yoshiki Hishiro
Life of this patent
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Abstract
A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a non-volatile component, such as non-volatile particles or polymers, which is applied after the photoresist material has been developed. By treating the photoresist with the solution containing a non-volatile component after developing but before drying, the non-volatile component fills the space between adjacent resist patterns and remains on the substrate during drying. The non-volatile component provides structural and mechanical support for the resist to prevent deformation or collapse by liquid surface tension forces.
Claims17
A method of forming a semiconductor construct, the method comprising:
- providing a photoresist layer over a substrate;
- exposing the photoresist layer to a predetermined pattern;
- developing the photoresist layer to form the predetermined photoresist pattern;
- and
- immersing the predetermined photoresist pattern to a pattern stabilizing solution.
A method of forming a semiconductor construct, the method comprising:
- providing a photoresist layer over a substrate;
- exposing the photoresist layer to a predetermined pattern;
- developing the photoresist layer to form the predetermined photoresist pattern;
- and
- subjecting the predetermined photoresist pattern to a pattern stabilizing solution containing non-volatile particles, wherein the non-volatile particles are selected from the group consisting of silica particles, graphite particles, latex spheres and Bucky balls.
A method of forming a semiconductor device, the method comprising;
- providing a photoresist layer over a semiconductor substrate;
- exposing the photoresist layer to a predetermined pattern;
- developing the photoresist layer with a developing solution to form the predetermined photoresist pattern;
- and
- subjecting the predetermined photoresist pattern to a stabilizing solution comprising a non-volatile component, wherein the non-volatile component is selected from the group consisting of silica particles, graphite particles, latex spheres and Bucky balls.
A method of patterning a photoresist layer, the method comprising;
- providing a photoresist layer over a substrate;
- exposing the photoresist layer to a predetermined pattern;
- developing the photoresist layer with a developing solution to form the predetermined photoresist pattern having a plurality of pattern lines;
- subjecting the predetermined photoresist pattern to a Klebesol solution;
- and
- subjecting the predetermined photoresist pattern to a temperature of about 90° C. to about 200° C. to remove water from the Klebesol solution and to leave silica particles of the Klebesol solution over the substrate and in between the plurality of pattern lines, the silica particles providing mechanical support to the plurality of pattern lines.
Dependencies are inferred from the claim text.