Heat treatment method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani, Yasuyuki Arai
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device comprising: supplying a gas from an upstream side of a reaction chamber; heating the gas by using heat treatment means located on the upstream of the reaction chamber, and making the gas flow downstream; and heating a substrate to be processed arranged on a downstream side of the reaction chamber while circulating the gas from the downstream side of the reaction chamber to the upstream side.
Claims65
A heat treatment method comprising:
- supplying a gas from an upstream side of a reaction chamber;
- heating an absorber surrounding a heat generating means located on the upstream of the reaction chamber by the heat generating means;
- heating the gas by using the absorber, and making the gas flow downstream;
- and
- heating a substrate to be processed arranged on a downstream side of the reaction chamber so that the gas is provided to the substrate from a upside of a surface of the substrate while circulating the gas from the downstream side of the reaction chamber to the upstream side.
A heat treatment method comprising:
- supplying a gas from an upstream side of a reaction chamber;
- heating the gas by using a heat treatment means formed in combination of heat generating means and a heat absorber for absorbing thermal radiation from the heat generating means, formed on the upstream side of the reaction chamber, and making the gas flow downstream;
- again supplying the gas from the upstream side after the gas is expelled from a downstream side of the reaction chamber;
- and
- heating a substrate to be processed that is held on the downstream side of the reaction chamber while the gas is being circulated;
- wherein said heat generating means is surrounded by said heat absorber, and
- wherein the gas is heated by heat absorber, said heat absorber is heated by the heat generating means.
A heat treatment method comprising:
- supplying a gas from an upstream side of a reaction chamber;
- heating the gas by using a heat treatment means formed in combination of heat generating means and a heat absorber for absorbing thermal radiation from the heat generating means, formed in the upstream side of the reaction chamber, and making the gas flow downstream;
- supplying the gas expelled from an exhaust portion of the reaction chamber to an intake portion;
- heating a substrate to be processed that is disposed in the reaction chamber by using the heated gas while the gas is being circulated;
- wherein said heat generating means is surrounded by said heat absorber, and
- wherein the gas is heated by heat absorber, said heat absorber is heated by the heat generating means.
A heat treatment method comprising:
- disposing a substrate in a processing chamber;
- supplying a gas from gas supply means to first gas heat treatment means, through a heat exchanger;
- heating the gas by using the first gas heat treatment means;
- supplying the heated gas to a first processing chamber;
- heating the gas expelled from the first processing chamber by using second gas heat treatment means;
- supplying the heated gas to a second processing chamber;
- and
- supplying the gas expelled from the second processing chamber to the heat exchanger.
A method of heat treating using n (where n>2) processing chambers and n gas heat treatment means, comprising:
- disposing a substrate in a processing chamber;
- supplying a gas heated by the m-th (where 1≦m≦(n−1)) gas heat treatment means to the m-th processing chamber;
- heating the gas supplied to the m-th processing chamber by using the (m+1)-th heat treatment means, and supplying the heated gas to the (m+1)-th processing chamber;
- supplying the gas supplied to the n-th processing chamber to a heat exchanger;
- and
- heating the substrate disposed in the n-th processing chamber by using the gas supplied from gas supply means as a heat source.
A heat treatment method comprising:
- disposing a substrate in a processing chamber;
- supplying a gas from first gas supply means to first gas heat treatment means, through a heat exchanger;
- heating the gas by using the first gas heat treatment means;
- supplying the heated gas to a first processing chamber;
- heating the gas expelled from the first processing chamber by using second gas heat treatment means;
- a heat treatment period for supplying the heated gas to a second processing chamber;
- supplying the gas from second gas supply means to the first processing chamber and to the second processing chamber, without going through the heat treatment means;
- and
- a cooling period for cooling the substrate disposed in the processing chamber.
A method of heat treating using n (where n>2) processing chambers and n gas heat treatment means, comprising:
- disposing a substrate in a processing chamber;
- supplying a gas supplied from first gas supply means and heated by the m-th (where 1≦m≦(n−1)) heat treatment means to the m-th processing chamber;
- heating the gas supplied to the m-th processing chamber by using the (m+1)-th heat treatment means, and supplying the heated gas to the (m+1)-th processing chamber;
- supplying the gas supplied to the n-th processing chamber to a heat exchanger;
- a heat treatment period for heating the substrate disposed in the n-th processing chamber, using the gas supplied from gas supply means as a heat source;
- supplying a cooling gas from second gas supply means to the n-th processing chamber;
- and
- a cooling period for cooling the substrate disposed in the n-th processing chamber.
Dependencies are inferred from the claim text.