Method for manufacturing a complementary metal-oxide semiconductor sensor
AssigneeUnited Microelectronics Corp.
InventorsChi-Rong Lin, Nien-Chung Jiang, Chih-Sheng Chang
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Abstract
A method for manufacturing a complementary metal-oxide semiconductor sensor is provided. The present method provides a semiconductor structure including a plurality of conductors thereon. An inter-metal dielectric layer is formed on the conductors. A silicon nitride film is applied on the inter-metal dielectric layer. An oxide layer is formed on the silicon nitride film. The oxide layer, the silicon nitride film and the inter-metal dielectric are etched to expose portions of the conductors. The oxide layer and the exposed conductors are cleaned in a cleaning step later.
Claims14
A method for manufacturing a complementary metal-oxide semiconductor sensor, comprising:
- providing a semiconductor structure including a plurality of conductors thereon;
- forming a dielectric layer onto said conductors and said semiconductor structure;
- forming a protective layer onto said dielectric layer;
- forming a sacrificial layer on said protective layer;
- etching portions of said sacrificial layer, said protective layer, and said dielectric layer to expose said conductors;
- and
- cleaning said sacrificial layer and said exposed conductors.
A method for manufacturing a complementary metal-oxide semiconductor sensor, comprising:
- providing a semiconductor structure including a plurality of conductors thereon;
- forming a dielectric layer onto said conductors and said semiconductor structure;
- forming a protective layer onto said dielectric layer;
- forming a sacrificial layer on said protective layer;
- moving said complementary metal-oxide semiconductor sensor into a process chamber covered by a bell jar;
- etching portions of said sacrificial layer, said protective layer, and said dielectric layer to expose said conductors;
- cleaning said sacrificial layer and said exposed conductors;
- and
- removing said complementary metal-oxide semiconductor sensor from said process chamber.
Dependencies are inferred from the claim text.