Micro pipe manufacturing method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Chih Chang, Tsong-Mu Lai, Hua-Shu Wu
Life of this patent
Estimating the term…
Abstract
A method for fabricating micro pipes on a semiconductor wafer or other substrate. According to the method of the invention, a base layer is initially deposited on the substrate and then etched to form a trench which exposes the surface of the substrate. Next, a PR (photoresist) layer of selected thickness is deposited over the base layer and the trench. Finally, in a curing step, the deposited photoresist is irradiated with ionizing radiation to cause outgassing of nitrogen gas from the photoresist layer, between the PR layer and the substrate. This step facilitates buckling of the PR layer into an arcuate bubble which defines the semispherical micro pipe structure.
Claims20
A method of fabricating a micro pipe, comprising the steps of:
- providing a substrate;
- providing a base layer on said substrate;
- providing a trench in said base layer;
- providing a photoresist layer on said base layer and covering said trench;
- and
- imparting a generally arcuate configuration to said photoresist layer by subjecting said photoresist layer to ionizing radiation.
A method of fabricating a micro pipe, comprising the steps of:
- providing a substrate;
- providing a base layer on said substrate;
- providing a trench in said base layer;
- providing a photoresist layer having a thickness of from about 1 um to about 10 um on said base layer and covering said trench;
- and
- imparting a generally arcuate configuration to said photoresist layer by subjecting said photoresist layer to ionizing radiation.
A method of fabricating a micro pipe, comprising the steps of:
- providing a substrate;
- providing a base layer on said substrate;
- providing a trench in said base layer;
- providing a positive polymeric photoresist layer on said base layer and covering said trench;
- and
- imparting a generally arcuate configuration to said photoresist layer by subjecting said photoresist layer to ionizing radiation.
Dependencies are inferred from the claim text.