Semiconductor device and making thereof

A semiconductor device comprising:

• a conductive layer;
• a smoothing layer formed in contact with the conductive layer, wherein the smoothing layer has a surface roughness less than that of the conductive layer and the smoothing layer comprises titanium rich nitride;
• and
• a dielectric layer formed above and in contact with the smoothing layer.

A semiconductor device comprising:

• a semiconductor substrate;
• a first electrode formed over the semiconductor substrate, wherein the first electrode comprises a first layer comprising metal and a second layer over the first layer, wherein the second layer comprises a refractory nitride;
• a first smoothing layer formed over the first electrode, wherein the first smoothing layer comprises titanium rich nitride;
• a dielectric layer formed on the first smoothing layer;
• and
• a second electrode formed over the dielectric layer, wherein the second electrode comprises a third layer comprising a refractory nitride and a fourth layer over the third layer, wherein the fourth layer comprises a metal.

A semiconductor device comprising:

• a semiconductor substrate;
• a first electrode formed over the semiconductor substrate;
• a capping layer over the first electrode, wherein the capping layer comprises a refractory nitride and the first electrode comprises a metal;
• a first conductive smoothing layer formed over the capping layer, wherein the first conductive smoothing layer has a surface roughness less than that of the capping layer;
• a dielectric layer formed on the first conductive smoothing layer;
• and
• a second electrode formed over the dielectric layer.