Plasma ashing process for removing photoresist and residues during ferroelectric device fabrication
AssigneesAxcelis Technologies, Inc., Intel Corporation
InventorsCarlo Waldfried, Qingyuan Han, Orlando Escorcia, Ebrahim Andideh
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Abstract
A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.
Claims22
A method for removing photoresist and residues from a substrate comprising a ferroelectric material, which comprises:
- plasma ashing the photoresist and residues at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.
A method for removing photoresist and residues from a substrate comprising a polymer ferroelectric material, which comprises:
- plasma ashing a crust portion of a photoresist layer at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the polymer ferroelectric material is exposed to the plasma;
- and
- wet cleaning to remove a remaining portion of the photoresist layer underlying the crust portion.
A method for removing photoresist and residues from a substrate comprising a ferroelectric polymer, the method comprising:
- exposing the substrate to a plasma ashing process, wherein the plasma ashing process comprises generating a plasma from a gas mixture consisting essentially of hydrogen and an inert gas at a temperature less than about 140° C. and at a pressure of about 0.1 to about 3 Torr;
- and
- volatilizing the photoresist and residues from the substrate without damaging the ferroelectric polymer.
Dependencies are inferred from the claim text.