Method of manufacturing a MOS transistor
AssigneeUnited Microelectronics Corp.
InventorsNeng-Hui Yang, Huan-Shun Lin, Hsiang-Ying Wang
Life of this patent
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Abstract
A method of manufacturing a MOS transistor, comprising the steps of providing a semiconductor substrate, forming a gate structure on the semiconductor substrate, performing an implantation to form two implanted regions in the semiconductor substrate respectively adjacent to the gate structure, performing an etching process to remove each implanted region and form a trench, and performing a selective epitaxial growth to fill epitaxial crystal into the trenches, thereby forming a source/drain of the MOS transistor.
Claims32
A method of manufacturing a MOS transistor, comprising:
- providing a semiconductor substrate;
- forming a gate structure on the semiconductor substrate;
- forming an oxide-nitride-oxide (ONO) offset spacer on each sidewall of the gate structure;
- performing an implantation process to form two implanted regions in the semiconductor substrate respectively adjacent to the oxide-nitride-oxide (ONO) offset spacers;
- performing an etching process to remove each implanted region and form a trench;
- and
- performing a selective epitaxial growth to fill epitaxial crystal into the trenches, thereby forming a source and a drain of the MOS transistor.
A method of forming source/drain regions in a semiconductor device, comprising:
- providing a semiconductor substrate having predetermined source/drain regions;
- performing an implantation process to form implanted regions in the predetermined source/drain regions;
- performing an etching process to remove the implanted regions and form trenches;
- and
- performing a selective epitaxial growth to fill epitaxial crystal comprising at least one of silicon, germanium, and carbon into the trenches.
A method of manufacturing a MOS transistor, comprising:
- providing a semiconductor substrate;
- forming a gate structure on the semiconductor substrate;
- performing an implantation process to form two implanted regions in the semiconductor substrate respectively adjacent to the gate structure;
- performing an etching process to remove each implanted region and form a trench;
- and
- performing a selective epitaxial growth to fill epitaxial crystal comprising at least one of silicon, carbon, and germanium into the trenches, thereby forming a source and a drain of the MOS transistor.
Dependencies are inferred from the claim text.