Method of forming a low voltage drive ferroelectric capacitor

A method of forming a low-voltage drive thin film ferroelectric capacitor, comprising the steps of:

• forming a bottom electrode having a LaNiO3 layer over a substrate;
• depositing a dielectric layer including a PZT-Pt thin film over said bottom electrode;
• performing a rapid thermal anneal on said substrate, wherein a PZT-Pt nanocomposite layer is formed including nanoparticles of platinum fixed in a PZT matrix;
• and
• forming a top electrode over said dielectric layer.

A method of forming a low-voltage drive thin film ferroelectric capacitor, comprising the steps of:

• co-sputtering using at least a first and second targets a thin film dielectric layer over a bottom electrode, said thin film dielectric layer comprising a ferroelectric material and platinum;
• annealing said dielectric layer, wherein a nanocomposite layer is formed including nanoparticles of platinum fixed in said ferroelectric material;
• and
• forming a top electrode over said dielectric layer.

A method of forming a low-voltage drive thin film ferroelectric capacitor, comprising the steps of:

• depositing via chemical vapor deposition a thin film dielectric layer over a bottom electrode, said thin film dielectric layer comprising a ferroelectric material and platinum;
• annealing said dielectric layer, wherein a nanocomposite layer is formed including nanoparticles of platinum fixed in said ferroelectric material;
• and
• forming a top electrode over said dielectric layer.

A method of forming a low-voltage drive thin film ferroelectric capacitor, comprising the steps of:

• forming a bottom electrode comprising a LaNiO3 layer over a substrate;
• depositing a dielectric layer including a PZT-Pt thin film over said bottom-electrode, said dielectric layer having a thickness of less than about 2000 Å, said PZT-Pt thin film comprising between about 2.5–8.5% Pt;
• performing a rapid thermal anneal on said substrate, wherein a PZT-Pt nanocomposite layer is formed including nanoparticles of platinum fixed in a PZT matrix, wherein substantially all of said platinum nanoparticles have dimensions less than about 30 nm;
• and
• forming a top electrode over said dielectric layer.