Polishing composition
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsCraig D. Lack, Terence M. Thomas, Qianqiu Ye
Life of this patent
Estimating the term…
Abstract
A polishing composition to remove metal from a dielectric layer by, either single step CMP polishing, or two step CMP polishing, the composition including, an aqueous solution provided with a substance having molecules with respective silanols, and a concentration of ions that solublize the silanols to adsorb on a hydrated surface of the dielectric layer during said polishing.
Claims23
A polishing composition for polishing with a polishing pad to remove metal from a semiconductor substrate, the composition comprising:
- an aqueous solution having a siloxane compound for hydrating to form soluble silanol groups during polishing and for bonding the soluble silanol groups with the surface of a dielectric layer of the semiconductor substrate during the polishing,
- wherein the total ionic strength of the polishing composition is greater than 0.1 molar and less than 1 molar.
The method for relishing a semiconductor substrate with a polishing pad and a polishing composition to remove metal from the semiconductor substrate, the method comprising the steps of:
- providing the polishing composition as an aqueous solution having a siloxane compound to hydrate for forming soluble silanol groups,
- forming bonds between the soluble silanol groups and the surface of a dielectric layer of the semiconductor substrate,
- providing abrasive particles by one or more than one of, being fixed on a polishing pad, being released from a polishing pad, and being added to the polishing composition, and
- polishing the semiconductor substrate in one step to remove a first metal and to remove a barrier layer of a second metal from the underlying dielectric layer.
The method for polishing a semiconductor substrate with a polishing pad and a polishing composition to remove metal from the semiconductor substrate, the method comprising the steps of;
- providing the polishing composition as an aqueous solution having a siloxane compound to hydrate for forming soluble silanol groups,
- forming bonds between the soluble silanol groups and the surface of a dielectric layer of the semiconductor substrate,
- providing abrasive particles by one or more than one of, being fixed on a polishing pad, being released from a polishing pad, and being added to the polishing composition,
- polishing the semiconductor substrate in a first step to remove a first metal from a barrier layer of a second metal, and
- polishing the semiconductor substrate in a second step to remove the barrier layer from the underlying dielectric layer.
An abrasive free polishing composition for polishing with a polishing pad having abrasive particles to remove metal from a semiconductor substrate, the composition comprising:
- an aqueous solution having a siloxane compound for hydrating to form soluble silanol groups during polishing, and
- groups for bonding the soluble silanol groups with the surface of a dielectric layer of the semiconductor substrate during polishing
- wherein the total ionic strength of the polishing composition is greater than 0.1 molar and less than 1 molar.
A method for polishing a semiconductor substrate with a polishing pad and a polishing composition to remove metal from the semiconductor substrate, the method comprising the steps of:
- providing the polishing composition as an aqueous solution having a siloxane compound to hydrate for forming soluble silanol groups,
- polishing the semiconductor substrate with the polishing composition and with the polishing pad having abrasive particles, and
- forming bonds between the soluble silanol groups and the surface of a dielectric layer on the semiconductor substrate.
Dependencies are inferred from the claim text.