Production method for SIMOX substrate and SIMOX substrate

A method of producing a Separation by Implanted Oxygen (“SIMOX”) substrate using a silicon substrate, comprising:

• a) implanting first oxygen ions in the silicon substrate;
• b) after step (a), forming a buried oxide layer in the silicon substrate by applying a high temperature heat treatment;
• c) after step (b), implanting second oxygen ions in the silicon substrate so that a dosing amount of the implantation of second oxygen ions is at most a total dosing amount of the implantation of the first oxygen ions, and so that a peak position of a distribution of the second implanted oxygen ions is located at a portion which is lower than an interface between the formed buried oxide layer and the silicon substrate thereunder;
• and
• d) after step (c), applying a further high temperature heat treatment.

A method of producing a Separation by Implanted Oxygen (“SIMOX”) substrate using a silicon substrate, comprising:

• a) implanting first oxygen ions in the silicon substrate;
• b) after step (a), forming a buried oxide layer in the silicon substrate by applying a high temperature heat treatment;
• c) after step (b), implanting second oxygen ions in the silicon substrate so that an accelerating energy applied to the implantation of the first oxygen ions is different from that applied to the implantation of the second oxygen ions, and that a peak position of a distribution of the second implanted oxygen ions is located at a portion which is lower than an interface between the formed buried oxide layer and the silicon substrate thereunder;
• and
• d) after step (c), applying a further high temperature heat treatment.

A method of producing a Separation by Implanted Oxygen (“SIMOX”) substrate using a silicon substrate, comprising:

• a) implanting first oxygen ions in the silicon substrate;
• b) after step (a), forming a buried oxide layer in the silicon substrate by applying a high temperature heat treatment;
• c) after step (b), implanting second oxygen ions in the silicon substrate so that a dosing amount of the implantation of the second oxygen ions does not exceed a total dosing amount of the first oxygen ions, so that an accelerating energy applied to the implantation of the first oxygen ions is different from that applied to the implantation of the second oxygen ions, and so that a peak position of a distribution of the second implanted oxygen ions is located at a portion which is lower than an interface between the formed buried oxide layer and the silicon substrate thereunder;
• and
• d) after step (c), applying a further high temperature heat treatment.

A Separation by Implanted Oxygen (“SIMOX”) substrate formed by implanting oxygen ions in a silicon substrate, comprising:

• a buried oxide layer provided in the silicon substrate by applying a high temperature heat treatment,
• wherein further oxygen ions are implanted in the silicon substrate so that a peak position of a distribution of the implanted oxygen is located at a portion that is lower than an interface between the formed buried oxide layer and the substrate provide thereunder,
• wherein a further high temperature heat treatment is applied to the silicon substrate, and
• wherein a thickness of a surface silicon layer of the SIMOX substrate is approximately 10 nm to 400 nm, and a thickness of the buried oxide layer is approximately 60 nm to 250 nm.

A Separation by Implanted Oxygen (“SIMOX”) substrate formed by implanting first oxygen ions in a silicon substrate, comprising:

• a buried oxide layer provided in the silicon substrate by applying a high temperature heat treatment,
• wherein further oxygen ions are implanted in the silicon substrate so that a dosing amount of the implantation of second oxygen ions is at most a total dosing amount of the implantation of the first oxygen ions, and so that a peak position of a distribution of the second implanted oxygen ions is located at a portion which is lower than an interface between the formed buried oxide layer and the silicon substrate thereunder,
• wherein a further high temperature heat treatment is applied to the silicon substrate, and
• wherein a thickness of a surface silicon layer of the SIMOX substrate is approximately 10 nm to 400 nm, and a thickness of the buried oxide layer is approximately 60 nm to 250 nm.

A Separation by Implanted Oxygen (“SIMOX”) substrate formed by implanting first oxygen ions in a silicon substrate, comprising:

• a buried oxide layer provided in the silicon substrate by applying a high temperature heat treatment,
• wherein further oxygen ions are implanted in the silicon substrate so that an accelerating energy applied to the implantation of the first oxygen ions is different from that applied to the implantation of the second oxygen ions, and that a peak position of a distribution of the second implanted oxygen ions is located at a portion which is lower than an interface between the formed buried oxide layer and the silicon substrate thereunder,
• wherein a further high temperature heat treatment is applied to the silicon substrate, and
• wherein a thickness of a surface silicon layer of the SIMOX substrate is approximately 10 nm to 400 nm, and a thickness of the buried oxide layer is approximately 60 nm to 250 nm.

A Separation by Implanted Oxygen (“SIMOX”) substrate formed by implanting first oxygen ions in a silicon substrate, comprising:

• a buried oxide layer provided in the silicon substrate by applying a high temperature heat treatment,
• wherein further oxygen ions are implanted in the silicon substrate so that a dosing amount of the implantation of the second oxygen ions does not exceed a total dosing amount of the first oxygen ions, so that an accelerating energy applied to the implantation of the first oxygen ions is different from that applied to the implantation of the second oxygen ions, and so that a peak position of a distribution of the second implanted oxygen ions is located at a portion which is lower than an interface between the formed buried oxide layer and the silicon substrate thereunder,
• wherein a further high temperature heat treatment is applied to the silicon substrate, and
• wherein a thickness of a surface silicon layer of the SIMOX substrate is approximately 10 nm to 400 nm, and a thickness of the buried oxide layer is approximately 60 nm to 250 nm.