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US 7,067,380 B2Granted
Semiconductor device and manufacturing method therefor
AssigneeKabushiki Kaisha Toshiba
InventorsJota Fukuhara, Hiroaki Tsunoda, Katsuyasu Shiba
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Abstract
A semiconductor device manufacturing method includes forming a wiring layer, and forming a first insulating film on the wiring layer under a condition that hydrogen in a plasma is 1% or less in all gas components.
Claims6
A semiconductor device manufacturing method comprising:
- forming a wiring layer;
- forming a first insulating film on the wiring layer under a condition that hydrogen in a plasma is not more than 1% in all gas components, the first insulating film not containing hydrogen;
- forming a second insulating film on the first insulating film under the condition that hydrogen in a plasma is not more than 1% in all gas components;
- planarizing the second insulating film until part of an upper surface of the first insulating film is exposed;
- forming a third insulating film on the part of the upper surface of the first insulating film and the second insulating film under the condition that hydrogen in a plasma is not more than 1% in all gas components;
- and
- forming a contact which is connected to the wiring layer through the first and third insulating films.
4 more elements
Dependencies are inferred from the claim text.