Integrated circuit with reverse engineering protection
AssigneesHRL Laboratories, LLC, Raytheon Company
InventorsLap-Wai Chow, William M. Clark, Jr., James P. Baukus
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Abstract
Technique and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having controlled outlines and controlled thicknesses. A layer of dielectric material of a controlled thickness is disposed among said plurality of layers to thereby render the integrated circuit structure intentionally inoperable.
Claims14
A method of deterring a reverse engineer comprising the steps of:
- associating at least one conductive contact with an active area;
- placing a polysilicon layer below said at least one conductive contact;
- forming a layer of silicide on the polysilicon layer;
- and
- preventing electrical conduction between said at least one conductive contact and said active area by inserting an intervening insulating layer.
A method for manufacturing a pseudo-transistor comprising the steps of:
- forming an active region in a substrate;
- defining a dielectric layer over at least a portion of said active region;
- disposing a metal layer over said dielectric layer, wherein said dielectric layer prevents an electrical connection between said active region and said metal layer;
- and
- providing a polysilicon layer over the dielectric layer the step of providing the polysilicon layer occurring after the step of defining the dielectric layer and before the step of disposing the metal layer.
A method for confusing a reverse engineer comprising the steps of:
- defining an active region in a substrate;
- associating a conductive layer with said active region;
- forming a dielectric layer over said conductive layer;
- providing a control electrode associated with the active region, wherein said dielectric layer prevents said conductive layer from influencing conduction through said active region in response to an application of control voltages to said control electrode;
- and
- placing a layer of polysilicon over at least a portion of said dielectric layer.
Dependencies are inferred from the claim text.