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US 7,008,854 B2Granted
Silicon oxycarbide substrates for bonded silicon on insulator
AssigneeMicron Technology, Inc.
InventorLeonard Forbes
Life of this patent
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Abstract
A method for forming a semiconductor on insulator structure includes forming a semiconductor layer on an insulating substrate, where the substrate is a different material than the semiconductor layer, and has a coefficient of thermal expansion substantially equal to that of the semiconductor layer. The semiconductor layer can also be formed having a thickness such that, it does not yield due to temperature-induced strain at device processing temperatures. A silicon layer bonded to a silicon oxycarbide glass substrate provides a silicon on insulator wafer in which circuitry for electronic devices is fabricated.
Claims72
A method for making a semiconductor on insulator structure comprising:
- providing a silicon oxycarbide substrate;
- and
- forming a semiconductor layer containing silicon above the silicon oxycarbide substrate, the silicon oxycarbide substrate being a different material than the semiconductor layer containing silicon, wherein the silicon oxycarbide substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor layer containing silicon.
A method for making a semiconductor on insulator structure comprising:
- providing an insulating substrate;
- and
- forming a semiconductor layer above the insulating substrate, the insulating substrate being a different material than the semiconductor layer, wherein the insulating substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor layer, wherein providing an insulating substrate includes providing a silicon oxycarbide substrate having its carbon concentration adjusted to substantially match the coefficient of thermal expansion of the silicon oxycarbide substrate with that of the semiconductor layer.
A method for making a semiconductor on insulator structure comprising:
- providing a silicon oxycarbide substrate;
- and
- performing a bonding cut process on a semiconductor wafer and the silicon oxycarbide substrate to provide a semiconductor layer bonded to the silicon oxycarbide substrate, wherein the silicon oxycarbide substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor layer.
A method for forming an electronic device comprising:
- bonding a semiconductor layer containing silicon to a silicon oxycarbide substrate, the silicon oxycarbide substrate being a different material than the semiconductor layer containing silicon, the silicon oxycarbide substrate having a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor layer containing silicon;
- and
- forming circuitry in the semiconductor layer containing silicon.
A method for forming an electronic device comprising:
- bonding a semiconductor layer to a substrate, the substrate being a different material than the semiconductor layer, the substrate having a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor layer;
- and
- forming circuitry in the semiconductor layer, wherein bonding a semiconductor layer to a substrate includes bonding a semiconductor layer to a silicon oxycarbide substrate.
A method for forming an electronic device comprising:
- implanting ions into a silicon wafer;
- adjusting a carbon concentration forming a silicon oxycarbide substrate having a coefficient of thermal expansion substantially matched to that of the silicon wafer layer;
- attaching the silicon wafer to the silicon oxycarbide substrate forming an attached structure;
- thermally processing the silicon wafer attached to the silicon oxycarbide substrate to cut a portion of the silicon wafer from the attached structure;
- processing the attached structure to provide a silicon layer having a thickness ranging from about 0.1 microns to about 10 microns;
- and
- forming circuitry in a silicon layer.
4 more elements
A method for forming an electronic device comprising:
- performing a bonding cut process on a silicon wafer and a silicon oxycarbide substrate to provide a silicon layer bonded to the silicon oxycarbide substrate, the silicon oxycarbide substrate having a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the silicon wafer;
- and
- forming circuitry in the silicon layer.
A method for fabricating a transistor comprising:
- providing a semiconductor on insulator structure formed by a method including;
- conditioning a semiconductor wafer, the semiconductor wafer containing silicon;
- and
- performing a bonding cut process on a the semiconductor wafer and a silicon oxycarbide substrate to provide a semiconductor layer bonded to the substrate, the silicon oxycarbide substrate being a different material than the semiconductor layer, wherein the silicon oxycarbide substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor layer;
- and
- forming a transistor in the semiconductor on insulator structure.
3 more elements
A method for fabricating a transistor comprising:
- providing a semiconductor on insulator structure formed by a method including;
- conditioning a semiconductor wafer;
- and
- performing a bonding cut process on a semiconductor wafer and a substrate to provide a semiconductor layer bonded to the substrate, the substrate being a different material than the semiconductor layer, wherein the substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor layer;
- and
- forming a transistor in the semiconductor on insulator structure, wherein performing a bonding cut process on a semiconductor wafer and a substrate to provide a semiconductor layer bonded to the substrate includes performing a bonding cut process on a semiconductor wafer and a silicon oxycarbide substrate.
3 more elements
A method for fabricating a memory device comprising:
- providing a silicon on insulator structure formed by a method including;
- conditioning a silicon wafer;
- forming a silicon oxycarbide substrate by adjusting its carbon concentration to substantially match a coefficient of thermal expansion of the silicon oxycarbide substrate to that of the silicon wafer layer;
- and
- performing a bonding cut process on the silicon wafer and the silicon oxycarbide substrate to provide a silicon layer bonded to the silicon oxycarbide substrate, the silicon layer having a thickness ranging from about 0.1 microns to about 10 microns;
- and
- forming a memory circuit in the silicon on insulator structure.
4 more elements
A method for manufacturing an electronic system comprising:
- providing a processor;
- and
- coupling a memory device to the processor, the memory device formed by a method including:
- providing a silicon on insulator structure formed by a method including:
- providing a silicon oxycarbide substrate;
- forming an insulator on a silicon wafer;
- and
- performing a bonding cut process on the silicon wafer having the insulator and the silicon oxycarbide substrate to provide a silicon layer bonded to the silicon oxycarbide substrate, the silicon oxycarbide substrate having a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the silicon wafer;
- and
- forming a memory circuit in the silicon on insulator structure.
7 more elements
A method for manufacturing an electronic system comprising:
- providing a processor;
- and
- coupling a memory device to the processor, the memory device formed by a method including:
- providing a silicon on insulator structure formed by a method including:
- providing a substrate;
- and
- performing a bonding cut process on a silicon wafer and the substrate to provide a silicon layer bonded to the substrate, the substrate being a different material than the silicon wafer, the substrate having a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the silicon wafer;
- and
- forming a memory circuit in the silicon on insulator structure, wherein providing a substrate includes providing a silicon oxycarbide substrate.
6 more elements
A method of manufacturing comprising:
- providing a silicon oxycarbide substrate;
- performing a bonding cut process on a semiconductor wafer and the silicon oxycarbide substrate to provide a semiconductor layer bonded to the silicon oxycarbide substrate, the semiconductor wafer containing silicon, the silicon oxycarbide substrate being a different material than the semiconductor wafer, wherein the silicon oxycarbide substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor wafer;
- and
- using a remaining portion of the semiconductor wafer resulting from the bonding cut to bond a second semiconductor layer to another substrate.
1 more element
A method of manufacturing comprising:
- providing a substrate;
- performing a bonding cut process on a semiconductor wafer and the substrate to provide a semiconductor layer bonded to the substrate, the substrate being a different material than the semiconductor wafer, wherein the substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor wafer;
- and using a remaining portion of the semiconductor wafer resulting from the bonding cut to bond a second semiconductor layer to another substrate, wherein providing a substrate includes providing a silicon oxycarbide substrate.
A method of manufacturing comprising:
- providing a substrate;
- performing a bonding cut process on a semiconductor wafer and the substrate to provide a semiconductor layer bonded to the substrate, the substrate being a different material than the semiconductor wafer, wherein the substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor wafer;
- and using a remaining portion of the semiconductor wafer resulting from the bonding cut to bond a second semiconductor layer to another substrate, wherein providing a substrate includes providing a silicon oxycarbide glass sheet that has been synthesized by prolysis of gel sheets obtained from a methyl-modified silica sol containing colloidal silica, polishing the silicon oxycarbide glass sheet, and cutting the silicon oxycarbide glass sheet into a wafer size pattern to form a silicon oxycarbide substrate.
A method of manufacturing comprising:
- providing a substrate;
- performing a bonding cut process on a semiconductor wafer and the substrate to provide a semiconductor layer bonded to the substrate, the substrate being a different material than the semiconductor wafer, wherein the substrate has a coefficient of thermal expansion that is approximately equal to a coefficient of thermal expansion for the semiconductor wafer;
- and using a remaining portion of the semiconductor wafer resulting from the bonding cut to bond a second semiconductor layer to another substrate, wherein using a remaining portion of the semiconductor wafer resulting from the bonding cut to bond a second semiconductor layer to another substrate includes providing a silicon oxycarbide substrate.
Dependencies are inferred from the claim text.