Chemical mechanical polishing slurry and chemical mechanical polishing method using the same

A method for chemical mechanical polishing (CMP), comprising the steps of:

• removing at least a portion of a polishing target layer on the surface of a substrate having a polishing stopper and the polishing target layer that covers the polishing stopper by rotatably contacting the substrate to a polishing pad while delivering a first aqueous slurry to a gap between the substrate and the polishing pad, wherein the slurry comprises metal oxide abrasive particles and an anionic polymer passivation agent having a first concentration;
• and
• rotatably contacting the substrate and polishing pad while delivering a second aqueous slurry to a gap between the substrate and the polishing pad, wherein the second aqueous slurry comprises the at least one type of metal oxide abrasive particle and the anionic polymer passivation agent in a second concentration, wherein the second concentration is less than the first concentration, wherein the second aqueous slurry has a pH (potential of hydrogen) in a range of about over an isoelectric point of the polishing target layer to about less than an isoelectric point of the polishing stopper, to thereby remove the polishing target layer until the surface of the polishing stopper is exposed.

A method for chemical mechanical polishing (CMP), comprising the steps of:

• rotatably contacting a substrate having a polishing stopper and a polishing target layer that covers the polishing stopper to a polishing pad while delivering an aqueous slurry, wherein the aqueous slurry comprises at least one kind of metal oxide abrasive particle, an anionic polymer passivation agent, one of quaternary amine, a salt thereof, and a derivative thereof, and a pH control agent, wherein the slurry has a pH in a range of about over an isoelectric point of the polishing target layer to about less than an isoelectric point of the polishing stopper for selectively polishing the polishing target layer, to thereby remove the polishing target layer until the surface of the polishing stopper is exposed.