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US 6,855,639 B1Granted
Precise patterning of high-K films
AssigneeIntel Corporation
InventorsJustin K. Brask, Mark L. Doczy, Matthew V. Metz, John Barnak, Paul R. Markworth
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Abstract
A high-K thin film patterning solution is disclosed to address structural and process limitations of conventional patterning techniques. Subsequent to formation of gate structures adjacent a high-K dielectric layer, a portion of the high-K dielectric layer material is reduced, preferably via exposure to hydrogen gas, to form a reduced portion of the high-K dielectric layer. The reduced portion may be selectively removed utilizing wet etch chemistries to leave behind a trench of desirable geometric properties.
Claims32
A method comprising:
- forming a layer of high-K dielectric material on a layer of substrate material;
- forming at least a first gate and a second gate on the layer of high-K dielectric material, leaving an exposed portion of the high-K material between the first and second gates;
- exposing the exposed portion of the layer of high-K dielectric material to hydrogen to reduce the exposed portion to form a metallic portion from the exposed portion;
- removing the metallic portion from the layer of high-K material by exposing the metallic portion to a wet chemical etchant selective to the metallic portion to form a trench;
- forming spacers adjacent to the first gate and the second gate;
- and
- wherein forming the spacers comprises forming the spacers adjacent the gates after removing the metallic portion from the layer of high-K material.
4 more elements
A method comprising:
- forming a layer of high-K dielectric material on a substrate;
- forming at least a first gate and a second gate on the layer of high-K dielectric material, leaving an exposed portion of the high-K material between the first and second gates;
- exposing the exposed portion of the layer of high-K dielectric material to hydrogen to reduce the exposed portion of the layer of high-K dielectric material to form a metallic portion from the exposed portion;
- removing the metallic portion from the layer of high-K material by exposing the metallic portion to a wet chemical etchant selective to the metallic portion to form a trench between the first gate and the second gate, while leaving discrete portions of the high-K material on sides of the first and second gates opposite the trench;
- forming a first spacer on a side of the first gate adjacent the trench, the first spacer extending from substantially a top surface of the gate into the trench to a bottom surface of the trench;
- and
- forming a second spacer on a side of the first gate opposite the trench, the second spacer extending from substantially the top surface of the gate to the discrete portion of the high-K material.
4 more elements
A method comprising:
- forming a layer of high-K dielectric material on a layer of substrate material;
- forming at least a first gate and a second gate on the layer of high-K dielectric material, leaving an exposed portion of the high-K material between the first and second gates, wherein each of the first gate and the second gate has a bottom surface;
- exposing the exposed portion of the layer of high-K dielectric material to hydrogen to reduce the exposed portion to form a metallic portion from the exposed portion;
- removing the metallic portion from the layer of high-K material by exposing the metallic portion to a wet chemical etchant selective to the metallic portion to form a trench between the first gate and the second gate;
- forming a first spacer adjacent to a first side of the first gate adjacent the trench, the first spacer extending from a position above the bottom surface of the first gate to extend into the trench to a position below the bottom surface of the first gate.
2 more elements
Dependencies are inferred from the claim text.