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US 6,855,267 B2Granted
Chemical mechanical polishing slurry
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-dong Lee, Bo-un Yoon, Sang-rok Hah
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Abstract
A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative.
Claims6
A polishing slurry which simultaneously removes a polysilicon layer, a silicon oxide layer and a silicon nitride layer, and which comprises:
- an abrasive;
- deionized water;
- a pH controlling agent;
- choline chloride;
- and
- polyethylene imine which reduces respective removal rates of the silicon oxide layer and the silicon nitride layer, and which has a molecular structure of [—CH2CH3N(CH2CH2NH2)—]x[—CH2CH2NH2—]y, where x and y are positive integers.
3 more elements
Dependencies are inferred from the claim text.