Electric semiconductor element with a contact hole
AssigneeRobert Bosch GmbH
InventorsAlfred Goerlach, Marion Gebhard
Life of this patent
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Abstract
An electric semiconductor component includes a monocrystalline semiconductor substrate made of silicon, for example, an insulation layer arranged on the surface of the semiconductor substrate and penetrated by a contact hole in at least one location and a contact element that contacts the semiconductor substrate through the contact hole and is made of a material in which the semiconductor material of the substrate is soluble in an anisotropic dissolving process. The edges of the contact hole are configured as diffusion stop structures.
Claims9
An electric semiconductor component, comprising:
- a monocrystalline semiconductor substrate;
- an insulation layer arranged on a surface of the semiconductor substrate and penetrated by at least one contact hole in at least one location;
- and
- a contact structure that contacts the semiconductor substrate through the contact hole and made of a material in which a semiconductor material of the semiconductor substrate is soluble in an anisotropic dissolving process;
- wherein edges of the contact hole include diffusion stop structures, and wherein the diffusion stop structures include curved segments.
An electric semiconductor component, comprising:
- a monocrystalline semiconductor substrate;
- an insulation layer arranged on a surface of the semiconductor substrate and penetrated by at least one contact hole in at least one location;
- and
- a contact structure that contacts the semiconductor substrate through the contact hole and made of a material in which a semiconductor material of the semiconductor substrate is soluble in an anisotropic dissolving process;
- wherein edges of the contact hole include diffusion stop structures, and wherein the diffusion stop structures include microstructured sections of the edges.
An electric semiconductor component, comprising:
- a monocrystalline semiconductor substrate;
- an insulation layer arranged on a surface of the semiconductor substrate and penetrated by at least one contact hole in at least one location;
- and
- a contact structure that contacts the semiconductor substrate through the contact hole and made of a material in which a semiconductor material of the semiconductor substrate is soluble in an anisotropic dissolving process;
- wherein edges of the contact hole include diffusion stop structures, and wherein the contact hole is shaped as one of an equilateral triangle and overlapping, intersecting equilateral triangles.
Dependencies are inferred from the claim text.