Semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorMasafumi Nagaya
Life of this patent
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Abstract
A semiconductor device according to the invention of the present application comprises a first semiconductor layer, a first insulating layer formed over the first semiconductor layer, a second semiconductor layer formed over the insulating layer, a protective element formed over the second semiconductor layer, an electrode pad, and a plurality of series-connected through holes for connecting the electrode pad and the protective element. Thus, a surge voltage applied across a diffused resistor can be lightened and hence an oxide film placed below the diffused resistor can be prevented from destruction.
Claims5
A semiconductor device comprising:
- a silicon-on-insulator (SOI) substrate which includes a first insulating layer and a silicon layer on the first insulating layer;
- a first resistive element formed in the silicon layer and in contact with the first insulating layer;
- a first transistor of a first conductivity type formed in the silicon layer, wherein the first transistor includes a first diffused region which connects to a first power source and a second diffused region which connects to one end of the first resistive element, wherein a bottom of the first and second diffused regions are in contact with the first insulating layer;
- a second transistor of a second conductivity type formed in the silicon layer, wherein the second transistor includes a third diffused region which connects to a second power source and a fourth diffused region which connects to the one end of the first resistive element, wherein a bottom of the third and fourth diffused regions are in contact with the first insulating layer;
- a second insulating layer formed on the substrate and covering the first and second transistors;
- a second resistive element formed on the second insulating layer, wherein one end of the second resistive element is connected to the other end of the first resistive element;
- and
- an electrode pad formed on the second insulating layer and connected to the other end of the second resistive element.
Dependencies are inferred from the claim text.