Control of buried oxide in SIMOX

A method for forming a buried structure in a substrate comprising the sequential steps of:

• selecting a semiconductor substrate containing silicon and having a major surface,
• heating said semiconductor substrate to a first temperature above 100 degrees C.,
• first implanting first ions into said major surface at a first energy to deposit first atoms in a range centered about a first depth whereby a buried damaged region is formed,
• heating/cooling said semiconductor substrate to a second temperature below 300 degrees C.,
• second implanting second ions into said major surface at a second energy to deposit second atoms in a range centered about a second depth whereby a buried amorphous region of semiconductor is formed,
• third implanting third ions into said major surface at a third energy and at a temperature in a range from 100 to 800 degrees C. to deposit third atoms in a range centered about a third depth whereby an additional buried damaged region is formed, and
• annealing said semiconductor substrate above 1100 degrees C. for a first time period to form at least one silicon compound containing region in said buried structure.