Method of manufacturing semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorSo Suzuki
Life of this patent
Estimating the term…
Abstract
In a method of manufacturing a capacitor, a semiconductor substrate is provided. On the semiconductor substrate, a transistor is formed. Then, a first conductive layer is formed on the substrate. An insulating layer is formed on the first conductive layer. A second conductive layer is formed on the insulating layer. The second conductive layer is patterned to form an upper electrode. Finally, the first conductive layer is patterned to form a lower electrode and a conductive pattern after the formation of the upper electrode.
Claims23
A method of manufacturing a capacitor comprising:
- providing a semiconductor substrate on which a transistor is formed;
- forming a first conductive layer on the substrate;
- forming an insulating layer over the first conductive layer;
- forming a second-conductive layer on the insulating layer;
- patterning the second conductive layer to form an upper electrode;
- patterning the first conductive layer to form a lower electrode and a conductive pattern after the formation of the upper electrode;
- forming an interlayer film on the upper and lower electrodes;
- planarizing a surface of the interlayer film;
- and
- simultaneously forming a first contact hole and a second contact hole through the interlayer film so that the first contact hole slightly etches the upper electrode and the second contact hole substantially exposes a surface of the lower electrode.
A method of manufacturing a capacitor comprising:
- providing a semiconductor substrate on which a transistor is formed;
- forming a first conductive layer over the substrate;
- forming a capacitor insulating layer on the first conductive layer;
- forming a second conductive layer on the capacitor insulating layer;
- patterning the second conductive layer to form an upper electrode;
- forming an offset insulating layer on the upper electrode and the capacitor insulating layer;
- patterning the first conductive layer to form a lower electrode and a conductive pattern after the formation of the upper electrode;
- forming an interlayer film on the upper and lower electrodes and the conductive pattern;
- planarizing a surface of the interlayer film;
- and
- simultaneously forming a first contact hole, a second contact hole, and a third contact hole through the interlayer film so that the first contact hole slightly etches the upper electrode and the second and third contact holes substantially expose a surface of the lower electrode and the conductive pattern, respectively.
A method of manufacturing a capacitor comprising:
- providing a semiconductor substrate on which a transistor is formed;
- forming a first conductive layer over the substrate;
- forming a first silicon oxide/nitride layer on the first conductive layer;
- forming a second conductive layer on the first silicon oxide/nitride layer;
- patterning the second conductive layer to form an upper electrode;
- forming a second silicon oxide/nitride layer on the upper electrode and the first silicon oxide/nitride layer;
- patterning the first conductive layer to form a lower electrode and a conductive pattern after the formation of the upper electrode;
- forming an interlayer film on the second silicon oxide/nitride layer;
- planarizing a surface of the interlayer film;
- and
- simultaneously forming a first contact hole, a second contact hole, and a third contact hole so that the first contact hole slightly etches the upper electrode and the second and third contact holes substantially expose a surface of the lower electrode and the conductive pattern, respectively, the first, second, and third contact holes extending through the interlayer insulating film and the second silicon oxide/nitride layer, and the second and third contact holes additionally extending through the first silicon oxide/nitride layer.
Dependencies are inferred from the claim text.