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US 6,746,925 B1Granted
High-k dielectric bird's beak optimizations using in-situ O2 plasma oxidation
AssigneeLSI Logic Corporation
InventorsHong Lin, Shiqun Gu, Wai Lo, Jim Elmer
Life of this patent
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Abstract
In a method of forming an integrated circuit device, sidewall oxides are formed by plasma oxidation on the patterned gate. This controls encroachment beneath a dielectric layer underlying the patterned gate. The patterned gate is oxidized using in-situ O2 plasma oxidation. The presence of the sidewall oxides minimizes encroachment under the gate edge.
Claims19
A method of forming a semiconductor integrated circuit, the method comprising:
- forming a dielectric layer on a substrate;
- forming a gate conductive layer on the dielectric layer;
- patterning and etching the gate conductive layer to form a gate electrode;
- oxidizing the gate electrode using plasma oxidation to form a sidewall oxide;
- etching the dielectric layer selectively such that a first region of the dielectric layer directly under the sidewall oxide is not etched;
- and
- removing the sidewall oxide after etching the dielectric layer.
4 more elements
A method of forming a semiconductor integrated circuit, the method comprising:
- forming a high-k dielectric layer on a substrate;
- defining a gate electrode on the high-k dielectric layer;
- forming a sidewall oxide on the gate electrode, the thickness of the sidewall oxide selected to correspond to an expected lateral penetration distance for SiO2 bird's beak encroachment under the high-k dielectric layer;
- etching the high-k dielectric layer selectively such that a first region of the high-k dielectric layer directly under the sidewall oxide is not etched;
- and
- removing the sidewall oxide after etching the high-k dielectric layer.
3 more elements
Dependencies are inferred from the claim text.