System and method for back-side contact for trench semiconductor device characterization
AssigneeInfineon Technologies North American Corp.
InventorKlaus Hummler
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Abstract
A method for forming a back-side contact for a vertical trench device includes grinding a back-side of a semiconductor substrate, milling a trench in the back-side of the semiconductor substrate, wherein a vertical trench fill is exposed, and depositing a conductive material, wherein the conductive material shorts the vertical trench fill to a buried plate. Grinding the back-side of the semiconductor substrate further includes grinding a dimple beneath a portion of the vertical trench device, wherein the trench is milled in the bottom portion of the dimple.
Claims5
A memory device having an accessible source such that device parameters can be determined, comprising:
- a dimple ground into a back-side of a semiconductor substrate of the device;
- a trench milled from the bottom portion of the dimple exposing a portion of a vertical trench fill;
- and
- a conductive material connecting the vertical trench fill and a buried plate of the device, wherein the conductive material is a layer covering a portion of the back-side of the semiconductor substrate.
Dependencies are inferred from the claim text.