Method and apparatus for etching a semiconductor die
AssigneeNisene Technology Group
InventorKirk Martin
Life of this patent
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Abstract
A method and apparatus for etching a semiconductor die are disclosed whereby flowing an etchant material across an inactive thereof thins the semiconductor die. In one embodiment, the etchant includes a mixture of nitric acid, hydrofluoric acid, and acetic acid and turbulently flows from one edge of the semiconductor die, across the inactive surface of the semiconductor die, to an opposing edge of the semiconductor die.
Claims26
A method for thinning a semiconductor die at least partially disposed in a semiconductor package, the method comprising:
- providing a semiconductor die having opposing active and inactive surfaces, the semiconductor die being disposed in a semiconductor package with the inactive surface being at least partially exposed through a cavity formed in the semiconductor package;
- inserting a first surface of a first member into the cavity to form a channel between the first surface of the first member and the inactive surface of the semiconductor die;
- and
- flowing an etchant through the channel to etch the inactive surface of the semiconductor die.
A method for etching a semiconductor die having an exposed surface disposed between first and second edges, the method comprising:
- providing an etching assembly including a support member and an adapter member;
- positioning the semiconductor die on the support member, the exposed surface of the semiconductor die facing away from the support member;
- positioning the adapter member adjacent the exposed surface of the semiconductor die to form a channel between the exposed surface of the semiconductor die and the adapter member;
- and
- flowing an etchant through the channel across the exposed surface from the first edge to the second edge to etch the semiconductor die.
A method for etching a semiconductor die having opposing first and second surfaces, the method comprising:
- providing an etching assembly including a support member and an adapter member;
- positioning the semiconductor die on the support member, the second surface of the semiconductor die facing away from the support member;
- positioning the adapter member adjacent the second surface of the semiconductor die to form a channel between the second surface of the semiconductor die and the adapter member;
- flowing a first acidic solution through the channel across the second surface of the semiconductor die to at least partially remove oxide on the second surface;
- flowing an etchant through the channel across the second surface from a first edge of the second surface to a second edge of the second surface to etch the semiconductor die;
- and
- flowing a second acidic solution through the channel across the second surface of the semiconductor die to at least partially polish the second surface of the semiconductor die.
Dependencies are inferred from the claim text.