SCR-ESD structures with shallow trench isolation

A method of fabricating a silicon controlled rectifier electrostatic discharge protection device with fewer required STI elements on a semiconductor substrate comprising:

• forming a first doped region of opposite dopant than said substrate extending down from the surface of said substrate;
• creating multiple isolation elements within said semiconductor substrate on either side of said silicon controlled rectifier device active area;
• forming a heavily doped second region with associated electrical contact area within said first doped region of similar dopant to said first doped region and forming a similar doped fourth region within the substrate area;
• forming a heavily doped third region with associated electrical contact area within said first dop region of opposite doping than said first doped region, and forming a similar doped fifth region in the substrate area;
• forming a first insulation layer on the surface of said silicon controlled rectifier device everywhere except for said electrical contact areas;
• Evaporating and annealing a refactory metal blank over said silicon controlled rectifier device surface including on top of said first insulation surface layer;
• Removing unwanted said refractory metal from said silicon controlled rectifier device surface non-electrical contact areas and performing a stabilization anneal;
• continuing said silicon controlled rectifier device processing to completion including creating first and second conductor elements and a passivation layer.