Method for forming a cantilever beam model micro-electromechanical system
AssigneeUnited Microelectronics Corp.
InventorsAnchor Chen, Gary Hong
Life of this patent
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Abstract
A cantilever beam type micro-electromechanical system (MEMS) is formed on a substrate. Two first electrodes are formed in a first dielectric layer on the substrate and a waveguide line is formed between the first electrodes. A patterned sacrificial layer and an arm layer are formed on the substrate. Two second electrodes and a second dielectric layer are formed in the arm layer, and an optical grating is formed in the second dielectric layer. Finally, a cap layer is formed on the substrate, and the patterned sacrificial layer is removed.
Claims26
A method for forming a cantilever beam model micro-electromechanical system (MEMS), the method comprising:
- providing a semiconductor substrate comprising a heavily doped layer and a first dielectric layer formed within the semiconductor substrate;
- forming at least two first conductors connected to a surface of the heavily doped layer in the first dielectric layer;
- forming a second dielectric layer not connected to the surface of the heavily doped layer in the first dielectric layer between the first conductors;
- forming a patterned sacrificial layer on the semiconductor substrate that covers the second dielectric layer, the first dielectric layer, and the first conductors;
- forming a third dielectric layer on the semiconductor substrate that covers the patterned sacrificial layer;
- forming a fourth dielectric layer not connected to a surface of the patterned sacrificial layer in the third dielectric layer;
- forming at least two second conductors on the third dielectric layer corresponding to the underlying first conductors formed on two sides of the second dielectric layer;
- etching the fourth dielectric layer to form a plurality of openings in the fourth dielectric layer;
- forming a cap layer on the semiconductor substrate to cover the second conductors, the fourth dielectric layer, and the third dielectric layer;
- and
- removing the patterned sacrificial layer.
A method for forming a cantilever beam model micro-electromechanical system (MEMS), the method comprising:
- providing a semiconductor substrate comprising a heavily doped layer and a first dielectric layer formed within the semiconductor substrate;
- forming at least two electrodes connected to a surface of the heavily doped layer in the first dielectric layer;
- forming a waveguide line not connected to the surface of the heavily doped layer in the first dielectric layer between the first electrodes;
- forming a patterned sacrificial layer on the semiconductor substrate that covers the waveguide line, the first dielectric layer, and the first electrodes;
- forming an arm layer on the semiconductor substrate that covers the patterned sacrificial layer;
- forming at least two second electrodes in the arm layer corresponding to the underlying first electrodes formed on two sides of the waveguide line;
- forming a second dielectric layer not connected to a surface of the patterned sacrificial layer in the arm layer;
- etching the second dielectric layer to form an optical grating in the second dielectric layer;
- forming a cap layer on the semiconductor substrate to cover the second electrodes, the second dielectric layer, and the optical grating;
- and
- isotropic etching the patterned sacrificial layer to form a cavity under the arm layer.
Dependencies are inferred from the claim text.